| BATCH DEPOSITION SYSTEMS
4Wave's family of batch deposition systems address the needs of researcher in demanding,
cross-disciplinary dielectric, metallic, magnetic, superconducting and semiconducting
thin-film development. Our customers' can deposit multi-layers on samples
up to 100mm using either biased target or conventional ion beam deposition technologies. We
offer several options, including low energy ion assist, high energy ion
etching, heated stage, magnetic stage and single wafer load lock. The level of automation
available ranges from a manual touch screen to a fully automated computer control system.
Applications:
- Spin Valves / AMR /
GMR
- Magnetic
Tunnel Junctions
- Dielectric
Interference Coatings
- Rugate
Filters
- High-k
Materials
- Shape Memory
Alloys
- Optoelectronic Materials
- Superconducting Materials
Ion Beam Deposition
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Features:
- High energy
plasma source (RF or DC)
- 3 x 4" target
carousel
- 100mm
diameter process surface Deposition Uniformity
< 3%
- Etch
Uniformity <5%
- Substrate
plasma cleaning, etching, oxidation,
nitridation (Gridded or Gridless)
- Water cooled,
tilting, rotating, magnetic, shuttered stage,
heating up to 600 C
- Single wafer
load lock stage
- Cryogenic or Turbo pumping system
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Biased Target Deposition
[ CLICK HERE FOR PDF BROCHURE
]
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Features:
- Low Energy
Gridless plasma source
- 3 x
4" target carousel
- Pulse DC
target from 1Hz to 75Khz up to -1300V
- 100mm
diameter process surface
- Deposition
Uniformity < 3%
- Etch
uniformity <5%
- Substrate
plasma cleaning, etching, oxidation,
nitridation (Gridded or Gridless)
- Water cooled,
tilting, rotating, magnetic, shuttered stage,
heating up to 600 C
- Single wafer
load lock stage
- Cryogenic or Turbo pumping system
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