CLUSTER MODULE DEPOSITION SYSTEMS

4Wave's family of deposition systems address the needs of our customers in depositing  dielectric, metallic, magnetic, superconducting and semiconducting thin-films in a production environment. Our customers can deposit multi-layers on samples up to 200mm using either Biased Target or conventional Ion Beam deposition technologies. We offer several options including low energy ion assist, high energy ion etching, heated stage, magnetic stage..

Applications:

• Spin Valves / AMR / GMR /TMR
• Magnetic Tunnel Junctions
• Dielectric Interference Coating
• Rugate Filters
• High-k Materials
• Shape Memory Alloys
• Optoelectronic Materials
• Superconducting Materials
• Uncooled IR sensors, VOx 

Biased Target Deposition Module

Features: Low Energy Gridless Plasma Source Ion Assisted deposition (Gridless or Gridded Source) Hollow Cathode Electron Source 6 x 8" or 3 x 12" or 2 x 16 "biased target carousel Pulse DC target from 1Hz to 250Khz up to -1300V Up to 200mm diameter process surface <3% non-uniformity Closed loop control of film properties Substrate plasma cleaning, etching oxidation, nitridation Water cooled, tilting, rotating, magnetic shuttered stage Robotically loaded, optically aligned wafers Load lock with up to 25 wafers

Ion Beam Deposition Module

Features: RF Gridded Plasma Source Ion Assisted deposition (Gridless or Gridded Source) Plasma Bridge Electron Source 6 x 8" or 3 x 12" or 2 x 16" target carousel Up to 200mm diameter process surface <3% non-uniformity Closed loop control of film properties Substrate plasma cleaning, etching oxidation, nitridation Water cooled, tilting, rotating, magnetic shuttered stage Robotically loaded, optically aligned wafers Load lock with up to 25 wafers