The 4W-LANS Laboratory Alloy and
Nanolayer Sputtering system address the needs of
researchers in demanding, cross-disciplinary areas
of dielectric, metallic, magnetic, superconducting
and semiconducting thin film development. The
system provides previously unobtainable degrees of
layer thickness control, interface control, alloy
composition control and materials flexibility in a
small, cost-effective package.
A new sputtering technology
called Biased Target Deposition (BTD) pioneered by
4Wave employees is at the heart of this
revolutionary new product for thin film materials
development. BTD is a hybrid between Ion Beam
Deposition (IBD) and conventional sputter
deposition which combines the best of each
technique. BTD is uniquely suited to demanding
applications requiring atomically engineered thin
films and interfaces as it offers a large range of
process pressures, control of adatom energies, and
excellent uniformity and repeatability.
Features:
High output, low-energy plasma
source
6 x 4" biased target carousel
independent target biasing for
alloy composition control
Water cooled, rotating,
magnetic, shuttered stage, heating up
to 600 C
Single wafer load lock stage
Applications:
Spin Valves /AMR/ GMR
Magnetic Tunnel Junctions
Dielectric Interference Coatings
Rugate Filters
High-k Materials
Shape Memory Alloys
Optoelectronic Materials
Superconducting Materials
Monocrystaline GaN
What is a Biased Target
Deposition (BTD)? In BTD, a low energy
plasma source is directed at a negatively biased
sputtering target. The maximum energy (typically
< 25 eV) of the ions is less than the sputter
threshold of the vacuum system materials. No
effort is made to capture all of the ions on the
target because ions that miss the target do not
generate unwanted sputtering. The ion beam is
generally broader than the target to improve
target illumination uniformity
