| ETCH SYSTEM
The LIBE, LISE and LIME family of ion etching
systems addresses the needs of customers seeking a flexible, cost-effective, small
footprint, ion-etching/processing workhorse for general-purpose research and small-scale
production applications. The LIBE, LISE and LIME products are based on a common vacuum
platform with a choice of two different ion sources.
4W-LIBE, 4W-LISE, 4W-LIME
The LIBE, LISE and LIME family of ion etching systems
addresses the needs of customers seeking a flexible, cost-effective, small -footprint,
ion-etching/ion-processing workhorse for general-purpose research and small-scale
production applications. The LIBE, LISE and LIME products are based on a common vacuum
platform with a choice of 2 different ion sources.
[ CLICK HERE FOR PDF BROCHURE]
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Applications:
- Ion Milling
- Ion Cleaning
- Plasma
Ashing
- Plasma
Oxidation / Nitridization
- Surface
Modification
- Reactive
Etching
- Ion Beam / Plasma CVD
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Features:
- 20cm, 12cm or
8cm Kaufman Ion Source
- High output, low-energy
plasma source
- 150 mm diameter process
surface
- <5% non-uniformity
- Water cooled, tilting,
rotating, pulsed DC biased stage
- Simple operation, small footprint
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| What is Ion Beam Etching, Ion Soft Etching and
Ion Multi-Etching? What is Ion Beam
Etching, Ion Soft Etching and Ion Multi-Etching? Ion Beam Etching (IBE) uses an energetic
(300-1000 eV), broad-beam, collimated and highly directional ion source to physically mill
material from a substrate mounted on a rotating fixture with adjustable tilt angle. The
highly collimated, directional ion flux allows for anisotropic etching of any material.
The ability to modify the angle of the substrate allows tailored sidewall profiles with
minimal sputtered redeposition on overlying masks. Ion Soft Etching (ISE) uses a low
energy (5 - 100 eV), dispersed plasma source to create inert or reactive ions to clean,
modify, or react with the process surface. If the substrate is biased negatively, then
additional energy is imparted to the ions in a direction normal to the substrate surface
(analogous to ICP-RIE). Ion Multi-Etching (IME) allows the simultaneous application of IBE
and ISE, enabling entirely new processes with a flexible choice of physical etching,
reactive etching, ion direction and ion energy.
The LIBE (Laboratory Ion Beam Etch) employs a Kaufman style gridded ion source providing
neutralized, collimated, high-energy, ion flux with a grounded substrate for use in
traditional ion milling applications. |
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The LISE (Laboratory Ion
Soft Etch) employs a low-energy plasma source providing neutralized, low-energy, diverging
ion flux with biased substrate table for use in soft etch applications, plasma cleaning,
plasma oxidation/nitridization, as well as traditional reactive ion etching applications.
Additionally, the LISE can be employed to deposit diamond-like carbon (DLC).
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The LIME (Laboratory Ion Multi-Etch) employs both a
Kaufman style gridded ion source and a low-energy plasma source, enabling all the
applications of the LIBE and LISE, plus unique processes employing both sources
simultaneously.
Please contact us for more information on the LIBE, LISE and
LIME products. We are happy to discuss with you the configuration that best suits your
application.
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