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ETCH
SYSTEM
The LIBE, LISE
and LIME family of ion etching systems addresses
the needs of customers seeking a flexible,
cost-effective, small footprint,
ion-etching/processing workhorse for
general-purpose research and small-scale
production applications. The LIBE, LISE and LIME
products are based on a common vacuum platform
with a choice of two different ion
sources.
4W-LIBE, 4W-LISE, 4W-LIME
The LIBE, LISE and
LIME family of ion etching systems addresses the
needs of customers seeking a flexible,
cost-effective, small -footprint,
ion-etching/ion-processing workhorse for
general-purpose research and small-scale
production applications. The LIBE, LISE and LIME
products are based on a common vacuum platform
with a choice of 2 different ion sources.
[ CLICK HERE FOR PDF
BROCHURE]
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Applications:
- Ion Milling
- Ion Cleaning
- Plasma Ashing
- Plasma Oxidation / Nitridization
- Surface Modification
- Reactive Etching
- Ion Beam / Plasma CVD
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Features:
- 20cm, 12cm or 8cm Kaufman Ion Source
- High output, low-energy plasma source
- 150 mm diameter process surface
- <5% non-uniformity
- Water cooled, tilting, rotating, pulsed DC
biased stage
- Simple operation, small
footprint
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| What is
Ion Beam Etching, Ion Soft Etching and Ion
Multi-Etching?
What is Ion
Beam Etching, Ion Soft Etching and Ion
Multi-Etching? Ion Beam Etching (IBE) uses an
energetic (300-1000 eV), broad-beam, collimated
and highly directional ion source to physically
mill material from a substrate mounted on a
rotating fixture with adjustable tilt angle. The
highly collimated, directional ion flux allows
for anisotropic etching of any material. The
ability to modify the angle of the substrate
allows tailored sidewall profiles with minimal
sputtered redeposition on overlying masks. Ion
Soft Etching (ISE) uses a low energy (5 - 100
eV), dispersed plasma source to create inert or
reactive ions to clean, modify, or react with
the process surface. If the substrate is biased
negatively, then additional energy is imparted
to the ions in a direction normal to the
substrate surface (analogous to ICP-RIE). Ion
Multi-Etching (IME) allows the simultaneous
application of IBE and ISE, enabling entirely
new processes with a flexible choice of physical
etching, reactive etching, ion direction and ion
energy.
The LIBE (Laboratory Ion Beam
Etch) employs a Kaufman style gridded ion source
providing neutralized, collimated, high-energy,
ion flux with a grounded substrate for use in
traditional ion milling applications.
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The LISE (Laboratory Ion Soft Etch)
employs a low-energy plasma source providing
neutralized, low-energy, diverging ion flux with
biased substrate table for use in soft etch
applications, plasma cleaning, plasma
oxidation/nitridization, as well as traditional
reactive ion etching applications. Additionally,
the LISE can be employed to deposit diamond-like
carbon (DLC).
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The LIME
(Laboratory Ion Multi-Etch) employs both a Kaufman
style gridded ion source and a low-energy plasma
source, enabling all the applications of the LIBE
and LISE, plus unique processes employing both
sources simultaneously.
Please contact us for more information
on the LIBE, LISE and LIME products. We are happy
to discuss with you the configuration that best
suits your
application.
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