CUTTING EDGE PRODUCTS
Deposition System
Etch System
Specialty System
Mini (De) Mux Chip
4 Channel ROSA
Optical Monitors
ONE-STOP SERVICES
Optical Thin Film Coatings
Thin Film Coatings
Design & Prototyping
System Refurbishment
Engineering
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INNOVATIVE R&D
Biased Target Deposition
In-situ Process Monitoring
Dynamic Process Compensation
Ion Beam Deposition
Ion Beam Etch
Direct IBD
Ion-Assisted Evaporation

THIN FILM PROCESSING

4Wave offers metallic, nitride and dielectric thin films using both Ion Beam Sputtering and Biased Target Deposition techniques. 4Wave can provide custom multilayer stacks of various materials and alloys.

Process Equipment :

  • Load Lock Ion Beam Deposition System up to 150mm wafers (Metal or Dielectric Films)
  • Load Lock Biased Target Despoition System up to 150mm wafers (Dielectric, metal, co-deposition of up to 2 targets mixed with oxygen)
  • Load Locked Biased Target Deposition System up to 200mm wafers. (Dielectric Films, Optical filters)
  • Batch Biased Target Deposition System up to 100mm wafers. (Dielectric, metal, co-deposition of up to 3 targets mixed with oxygen)
  • Batch Biased Target Deposition System up to 150mm wafers. (Dielectric, metal, co-deposition of up to 2 targets mixed with oxygen)

Metrology Equipment:

  • PerkinElmer Lanbda 950 UV/VIS Spectrometer (Transmition and Reflection)
  • Tencor P12 Profilometer and Stress Measurement
  • Sentech SE850 UV/VIS Mapping Elipsometer
  • Prometrix  Resistivity Mapper
  • Macbeth TD929 Densitometer
  • Olympus BX60M Microscope with Digital Camera
  • Agilent 86100A Wide Bandwidth Osciloscope with 86105A 1000nm-1600nm
  • Agilent 86130A Error Perfromance Analyser
  • Agilent 86142B Optical Spectrum Analyser
  • Agilent 8164B Lighwave Measurement System with
    • 81633A Power Sensor
    • 81600B Tunable Laser
  • Nettest Tunable Lasers (1300nm 50nm and 1550nm 50nm)
  • Bede 200 XRD
  •  Films:

    • High Purity Dense Metalic, Conformal Coatings:
      • Ag, Ta, NiFe, Cr, Cu, Co, FeMn,  V, Hf, Gd, Sc, C, Zn, Sn, Mn, TiN, TaN, Ti
    • Dielectric films by reactive sputtering: fully dense, amorphous, conformal coatings:
      • SiO2, TiO2, Ta2O5, Al2O3, HfO2, V2O5, VO2, AgO, MgO
    • Nitride films by reactive sputtering: fully dense, amorphous, conformal coatings:
      • AlN, SiN (High or Low Stress), HfN
      • GaN (n and p) InGaN, AlGaN (Amorphous, Polychristaline, Monochrystaline)
    • Alloys: 
      • Garnet Materials:Up to 4 Metalic Materials of various componsitions with oxides
      • High-K Materials
    • Various Sheet Rhos:
      • TaNx, VOx (Varaying TCR and Sheet Resistance), TiNx

      TEM Cross Section

      TEM Amorphous Binary Oxide Film on Ge

      TEM cross-section of XYO3 deposited on Ge

      Gallium Nitride

      GaN XRD, Biased Target Deposition

      3 Layer 4 Element Garnet Material

      Multi Layer, Multi Element Garnet Material Thin Film Stack

      200mm Deposition

      Ion Beam Deposition, Plasma Processing Thin Film

       

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