NEWS
4Wave Launches Alloy and Nanolayer Sputtering
System
Supports widest range of thin-film deposition challenges on a single platform
Sterling, VA, November 1, 2002 – 4Wave, Inc. today introduced the
4W-LANS laboratory alloy and nanolayer sputtering system.The system provides previously
unobtainable degrees of layer thickness control, interface control, alloy composition
control and materials flexibility in a small, cost-effective package.
A new sputtering technology called Biased Target Ion Beam Deposition
(BTIBD) pioneered by 4Wave employees is at the heart of this revolutionary new product for
thin film materials development. BTIBD is a hybrid between Ion Beam Deposition (IBD) and
conventional sputter deposition that combines the best of each technique. BTIBD is
uniquely suited to demanding applications requiring atomically engineered thin films and
interfaces as it offers a large range of process pressures, control of adatom energies,
and excellent uniformity and repeatability.
Shipments of 4Wave’s BTIBD tools are expected to begin in the first quarter of 2003.
Information will be on display at the fall meeting of the Materials Research Society
conference being held December 2-6 at Boston Hynes Convention Center. Customers and press
are invited to visit the 4Wave booth at any time during the exhibit show.
About 4Wave, Inc.
4Wave is the premier developer of atomic layer engineering techniques
through ion beam processing innovations. 4Wave’s expertise in ion beam and plasma
processing systems, ion/electron/plasma sources and in-situ process monitors for the
etching and deposition of thin films has resulted in the development of the Biased Target
Ion Beam Deposition Technique (BTIBD). BTIBD is uniquely suited to demanding
nanotechnology advancements in optical, semiconductor and magnetic device industries. (www.4waveinc.com)
Company Contact:
Trey Middleton, VP Business Development
703.787.9283x100
tmiddleton@4waveinc.com
Investor Information:
Sami Antrazi, President
703.787.9283x108
santrazi@4waveinc.com
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